使用Eu掺杂的GaN挑战高效波长稳定的红色发光二极管制作 Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN
演讲课题：使用Eu掺杂的GaN挑战高效波长稳定的红色发光二极管制作 Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN
演讲人：藤原康文 Yasufumi Fujiwara
演讲摘要：
Since the invention of blue and green light-emitting diodes (LEDs), one of the targets of researchers has been to extend emission to shorter and longer wavelengths. We have focused on Eu ions that have been widely used as an activator for red phosphor, and have succeeded in developing the world’s first red LED that operates at room temperature using Eu-doped GaN (GaN:Eu) as an active layer. The LED can exhibit a sharp, intense, and temperature-independent emission due to the intra-4f shell transitions of Eu ions, which has a huge potential for GaN-based monolithic full-color LED displays. Light output power of the LED has been growing steadily up to sub-milli watts in these years. In my talk, current status of the red LED and strategies for further enhancement of the light output power will be reviewed.
